JANS2N2904
TRANS PNP 60V 0.6A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2904 is a PNP bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of up to 600 mA. It offers a minimum DC current gain (hFE) of 40 at 150 mA and 10 V. The saturation voltage (Vce Sat) is specified at a maximum of 1.6 V for 50 mA base current and 500 mA collector current. With a maximum power dissipation of 800 mW and an operating temperature range of -65°C to 200°C, this transistor is suitable for high-reliability environments. The JANS2N2904 is qualified to MIL-PRF-19500/290 and comes in a TO-39 (TO-205AD) metal can package, making it ideal for through-hole mounting in applications within the aerospace and defense industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/290 |
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