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JANS2N2484UBC/TR

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JANS2N2484UBC/TR

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANS2N2484UBC-TR is a high-reliability, NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount component, packaged in an UBC (3-SMD, No Lead) configuration on a tape and reel, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. Engineered to meet stringent military specifications, including MIL-PRF-19500/376 qualification, it operates across a wide temperature range from -65°C to 200°C. Key performance parameters include a minimum DC current gain (hFE) of 250 at 1mA/5V and a maximum Vce saturation of 300mV at 100µA/1mA. The device dissipates a maximum power of 360mW. This small-signal BJT is utilized in aerospace, defense, and high-temperature industrial systems requiring robust and reliable performance.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)2nA
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageUBC
GradeMilitary
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max360 mW
QualificationMIL-PRF-19500/376

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