JANS2N2484UBC
TRANS NPN 60V 0.05A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANS2N2484UBC is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA, this device is suitable for general-purpose amplification and switching tasks. Its minimum DC current gain (hFE) is specified at 250 at 1mA collector current and 5V collector-emitter voltage, with a low saturation voltage of 300mV at 100µA base current and 1mA collector current. The transistor exhibits a minimal collector cutoff current of 2nA. Engineered for extended operational parameters, it functions across a temperature range of -65°C to 200°C. The JANS2N2484UBC is qualified to MIL-PRF-19500/376, indicating its suitability for military and aerospace environments. This component is supplied in a 4-SMD, No Lead UB package, optimized for surface mounting and delivered in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/376 |
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