JANS2N2484UB
TRANS NPN 60V 0.05A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2484UB is a high-reliability NPN bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/376, features a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. The transistor exhibits a minimum DC current gain (hFE) of 250 at 1mA collector current and 5V collector-emitter voltage, with a Vce (sat) of 300mV at 100µA base current and 1mA collector current. Its maximum power dissipation is 360mW, and it operates across an extended temperature range of -65°C to 200°C. The JANS2N2484UB is housed in a 4-SMD, No Lead UB package, suitable for surface mounting. This device is commonly utilized in aerospace, defense, and industrial control systems requiring robust performance and extended temperature capabilities.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/376 |
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