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JANS2N2369AUB

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JANS2N2369AUB

TRANS NPN 20V UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANS2N2369AUB is an NPN bipolar junction transistor designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/317, features a 20V collector-emitter breakdown voltage and a maximum power dissipation of 360mW. It offers a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage, with a Vce(sat) of 450mV at 10mA base current and 100mA collector current. The collector cutoff current is a maximum of 400nA. Operating across a wide temperature range of -65°C to 200°C, this surface-mount device comes in a 3-SMD, No Lead (UB) package. Its robust construction and performance characteristics make it suitable for use in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 1V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max360 mW
QualificationMIL-PRF-19500/317

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