JANS2N2369AUA
TRANS NPN 15V UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANS2N2369AUA is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component, qualified under MIL-PRF-19500/317, features a 15V collector-emitter breakdown voltage and a maximum power dissipation of 360mW. It is offered in a 4-SMD, No Lead UA package for surface mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V Vce, and a maximum Vce saturation of 450mV at 10mA base current and 100mA collector current. The collector cutoff current is rated at a maximum of 400nA. The JANS2N2369AUA operates across a wide temperature range of -65°C to 200°C (TJ). This transistor is suitable for demanding applications in aerospace, defense, and industrial sectors requiring robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |