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JANS2N2369A

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JANS2N2369A

TRANS NPN 15V 400NA TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N2369A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component, qualified to MIL-PRF-19500/317, features a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 360 mW. It exhibits a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage. The transistor's collector cutoff current is rated at a maximum of 400nA. With a Vce saturation of 450mV at 10mA base current and 100mA collector current, it is suitable for switching and amplification circuits requiring precise control. The device is housed in a TO-18 (TO-206AA) metal can package and operates within an extended temperature range of -65°C to 200°C. This component is commonly found in aerospace, defense, and industrial electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max360 mW
QualificationMIL-PRF-19500/317

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