JANS2N2369A
TRANS NPN 15V 400NA TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANS2N2369A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component, qualified to MIL-PRF-19500/317, features a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 360 mW. It exhibits a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage. The transistor's collector cutoff current is rated at a maximum of 400nA. With a Vce saturation of 450mV at 10mA base current and 100mA collector current, it is suitable for switching and amplification circuits requiring precise control. The device is housed in a TO-18 (TO-206AA) metal can package and operates within an extended temperature range of -65°C to 200°C. This component is commonly found in aerospace, defense, and industrial electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |