JANS2N2222AUB
TRANS NPN 50V 0.8A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology NPN Bipolar Junction Transistor, JANS2N2222AUB, is a military-grade component designed for demanding applications. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. The Power Dissipation is rated at 500mW, with a Vce(sat) of 1V at 50mA/500mA. The guaranteed minimum DC current gain (hFE) is 100 at 150mA and 10V. Operating across a wide temperature range from -65°C to 200°C, this transistor is supplied in a Bulk package with a 4-SMD, No Lead (UB) configuration. Its qualification meets MIL-PRF-19500/255 standards, making it suitable for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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