JANS2N2222A
TRANS NPN 50V 0.8A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2222A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 800 mA. It offers a maximum power dissipation of 500 mW and a saturation voltage of 1 V at 50 mA base current and 500 mA collector current. The DC current gain (hFE) is a minimum of 100 at 150 mA collector current and 10 V collector-emitter voltage. With a collector cutoff current of 50 nA, it exhibits excellent off-state characteristics. The JANS2N2222A is housed in a TO-18 (TO-206AA) metal can package and operates within an extended temperature range of -65°C to 200°C. This component is qualified to MIL-PRF-19500/255, making it suitable for military and aerospace systems, as well as industrial control and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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