JANS2N2221AUB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANS2N2221AUB-TR is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This surface-mount device, packaged in UB (3-SMD, No Lead) on tape and reel, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 800 mA. With a power dissipation of 500 mW and a wide operating temperature range of -65°C to 200°C, it is suitable for demanding environments. The device exhibits a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, with a Vce(sat) of 1 V at 500 mA and 50 mA. This component meets the stringent requirements of MIL-PRF-19500/255 and finds application in military and aerospace systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |