JANS2N2219AL
TRANS NPN 50V 0.8A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2219AL is a high-reliability NPN bipolar junction transistor (BJT) rated for 50V collector-emitter breakdown voltage and 800mA continuous collector current. This TO-205AA (TO-5AA) packaged device offers a maximum power dissipation of 800mW and a low collector cutoff current of 10nA. Minimum DC current gain (hFE) is specified at 75 at 1mA collector current and 10V collector-emitter voltage. The transistor operates across a wide temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/251. Applications include military and aerospace systems requiring robust performance under demanding environmental conditions. Saturation voltage is a maximum of 1V at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |