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JANS2N2219A

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JANS2N2219A

TRANS NPN 50V 0.8A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N2219A is a high-reliability NPN bipolar junction transistor designed for demanding applications. This MIL-PRF-19500/251 qualified component features a 50V collector-emitter breakdown voltage and a continuous collector current capability of 800mA, with a maximum power dissipation of 800mW. Offered in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting, it exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. The device maintains a low collector cutoff current of 10nA and a saturation voltage of 1V at 50mA collector current and 500mA base current. Operating temperatures range from -55°C to 200°C (TJ). This transistor is utilized in military, aerospace, and industrial systems requiring robust performance and extended operational lifespans.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW
QualificationMIL-PRF-19500/251

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