JANS2N2219A
TRANS NPN 50V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2219A is a high-reliability NPN bipolar junction transistor designed for demanding applications. This MIL-PRF-19500/251 qualified component features a 50V collector-emitter breakdown voltage and a continuous collector current capability of 800mA, with a maximum power dissipation of 800mW. Offered in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting, it exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. The device maintains a low collector cutoff current of 10nA and a saturation voltage of 1V at 50mA collector current and 500mA base current. Operating temperatures range from -55°C to 200°C (TJ). This transistor is utilized in military, aerospace, and industrial systems requiring robust performance and extended operational lifespans.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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