JANS2N2218AL
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2218AL is a high-reliability NPN bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-5AA (TO-205AA) metal can package, offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 800mA. With a power dissipation rating of 800mW and a minimum DC current gain (hFE) of 40 at 150mA and 10V, it provides robust performance. The JANS2N2218AL operates across a wide temperature range of -55°C to 200°C and meets the stringent requirements of MIL-PRF-19500/251 qualification. This device finds application in aerospace, defense, and other critical systems requiring dependable switching and amplification. Key parameters include a Vce(sat) of 1V at 50mA/500mA and a collector cutoff current of 10nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |