JANKCB2N5415
TRANS PNP 200V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANKCB2N5415 is a PNP bipolar junction transistor housed in a TO-5 metal can package. This component offers a maximum collector current of 1 A and a collector-emitter breakdown voltage of 200 V. It features a minimum DC current gain (hFE) of 30 at 50 mA and 10 V. The saturation voltage (Vce(sat)) is a maximum of 2 V at 5 mA base current and 50 mA collector current. Power dissipation is rated at 750 mW, with a maximum collector cutoff current of 1 mA. This device is qualified to MIL-PRF-19500/485, indicating its suitability for military applications. The operating temperature range is -65°C to 200°C. This through-hole transistor is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 750 mW |
| Qualification | MIL-PRF-19500/485 |
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