JANKCB2N5002
TRANS NPN 80V 10A DIEManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANKCB2N5002 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This die-form component offers a robust 80V collector-emitter breakdown voltage and a continuous collector current capability of 10A, with a maximum power dissipation of 2W. Featuring a minimum DC current gain (hFE) of 30 at 2.5A and 5V, and a Vce saturation of 1.5V at 500mA and 5A, it ensures efficient switching and amplification. The JANKCB2N5002 is qualified to MIL-PRF-19500/534, indicating its suitability for military-grade applications, and operates across a wide temperature range of -65°C to 200°C. Its stud mount capability facilitates effective thermal management in power-intensive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | Die |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | MIL-PRF-19500/534 |
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