JANKCB2N4033
TRANS PNP 80V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANKCB2N4033, a PNP bipolar junction transistor, offers robust performance for demanding applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. With a minimum DC current gain (hFE) of 100 at 100mA and 5V, it ensures efficient amplification. The device dissipates a maximum power of 800mW and operates within a temperature range of -65°C to 200°C. The TO-39-3 metal can package, designed for through-hole mounting, is suitable for industrial and defense sectors. This transistor meets MIL-PRF-19500/512 qualification standards.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/512 |
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