JANKCB2N3440
TRANS NPN 250V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANKCB2N3440 is a military-grade NPN bipolar junction transistor (BJT) packaged in a TO-39 (TO-205AD) metal can. This through-hole component offers a maximum collector-emitter breakdown voltage of 250V and a continuous collector current capability of 1A. It features a maximum power dissipation of 800mW and a collector cutoff current of 2µA. The DC current gain (hFE) is a minimum of 40 at 20mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at 500mV maximum for a base current of 4mA and collector current of 50mA. This device is qualified to MIL-PRF-19500/368 and operates across a temperature range of -55°C to 200°C. It is supplied in Tape & Reel packaging. This component is suitable for applications in aerospace and defense.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
Request a Quote
Clients Also Buy
JANTX2N3418
TRANS NPN 60V 3A TO5
JANTXV2N3440UA/TR
TRANS NPN 250V 2UA UA
2N5416UA
TRANS PNP 300V 1A UA
