JANKCA2N3439
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANKCA2N3439 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a 350V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V Vce. The device exhibits a Vce(sat) of 500mV at 4mA base current and 50mA collector current, with a low collector cutoff current of 2µA. With a maximum power dissipation of 800mW and an operating temperature range of -55°C to 200°C, this transistor meets MIL-PRF-19500/368 qualification, making it suitable for demanding military and aerospace systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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