JANHCC2N5151
TRANS PNP 80V 2A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANHCC2N5151 is a military-grade PNP bipolar junction transistor (BJT) designed for demanding applications. This component, housed in a TO-39 (TO-205AD) metal can package, features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 2A. The device offers a maximum power dissipation of 1W and a thermal junction operating range of -65°C to 200°C. With a minimum DC current gain (hFE) of 30 at 2.5A and 5V, and a collector cutoff current of 50µA, the JANHCC2N5151 is suitable for power switching and amplification circuits. Its qualification to MIL-PRF-19500/545 underscores its reliability in aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/545 |
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