JANHCB2N5004
TRANS NPN 80V 10A DIEManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANHCB2N5004 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This die-level component features a collector-emitter breakdown voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 10A, with a maximum power dissipation of 2W. The dc current gain (hFE) is a minimum of 70 at 2.5A and 5V. It operates across a wide temperature range of -65°C to 200°C. The device is qualified to MIL-PRF-19500/534, indicating its suitability for military and high-reliability environments. This transistor is commonly utilized in power switching and amplification circuits within aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | Die |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | MIL-PRF-19500/534 |
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