JANHCB2N5002
TRANS NPN 80V 10A DIEManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANHCB2N5002 is an NPN bipolar junction transistor, supplied as a die for stud mount applications. This device features a breakdown voltage of 80V and a maximum continuous collector current of 10A, with a power dissipation of 2W. The DC current gain (hFE) is a minimum of 30 at 2.5A and 5V. It offers a Vce(sat) of 1.5V at 500mA collector current and 5A collector current. The collector cutoff current is 50µA maximum. This military-grade component, qualified to MIL-PRF-19500/534, operates across a wide temperature range of -65°C to 200°C. It is commonly utilized in aerospace, defense, and high-reliability industrial applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | Die |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | MIL-PRF-19500/534 |
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