JANHCB2N3440
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANHCB2N3440 is a military-grade NPN bipolar junction transistor (BJT) packaged in a TO-39 (TO-205AD) metal can for through-hole mounting. This component offers a 250V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW and a minimum DC current gain (hFE) of 40 at 20mA and 10V, it is suitable for demanding applications. The Vce(sat) is specified at a maximum of 500mV at 4mA base current and 50mA collector current, with a collector cutoff current (Icbo) of 2µA. Operating temperature range is -55°C to 200°C. This device is qualified to MIL-PRF-19500/368 and is commonly utilized in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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