JANHCB2N3439
TRANS NPN 350V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANHCB2N3439 is a military-grade NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 350V and a maximum continuous collector current of 1A. With a power dissipation of 800mW and a minimum DC current gain (hFE) of 40 at 20mA and 10V, it provides robust performance. The saturation voltage (Vce(sat)) is a maximum of 500mV at 4mA base current and 50mA collector current. This transistor is qualified to MIL-PRF-19500/368, ensuring reliability in demanding environments. It finds application in aerospace, defense, and industrial equipment requiring dependable switching and amplification capabilities. The operating temperature range is -55°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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