JANHCB2N2906A
TRANS PNP 60V 0.6A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANHCB2N2906A is a PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. This component is qualified to MIL-PRF-19500/291 standards, indicating its suitability for demanding military applications. It features a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 600mA. The transistor has a maximum power dissipation of 500mW and a minimum DC current gain (hFE) of 40 at 150mA collector current and 10V Vce. The saturation voltage (Vce Sat) is specified at a maximum of 1.6V for a 50mA base current and 500mA collector current. Encased in a TO-18 (TO-206AA) metal can package, this device is suitable for through-hole mounting and operates across a wide temperature range of -65°C to 200°C. The JANHCB2N2906A is commonly utilized in power switching and amplification circuits within aerospace, defense, and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
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