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JANHCB2N2906A

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JANHCB2N2906A

TRANS PNP 60V 0.6A TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANHCB2N2906A is a PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. This component is qualified to MIL-PRF-19500/291 standards, indicating its suitability for demanding military applications. It features a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 600mA. The transistor has a maximum power dissipation of 500mW and a minimum DC current gain (hFE) of 40 at 150mA collector current and 10V Vce. The saturation voltage (Vce Sat) is specified at a maximum of 1.6V for a 50mA base current and 500mA collector current. Encased in a TO-18 (TO-206AA) metal can package, this device is suitable for through-hole mounting and operates across a wide temperature range of -65°C to 200°C. The JANHCB2N2906A is commonly utilized in power switching and amplification circuits within aerospace, defense, and industrial control systems. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-18
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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