JANHCA2N4150
TRANS NPN 70V 10A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANHCA2N4150 is an NPN Bipolar Junction Transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-5 metal can package (TO-205AA), offers a collector-emitter breakdown voltage of 70V and a continuous collector current capability of 10A. With a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 50 at 1A and 5V, it provides robust performance. The device exhibits a Vce saturation of 2.5V at 1A base current and 10A collector current, with a collector cutoff current of 10µA. Operating reliably across a wide temperature range of -65°C to 200°C (TJ), this military-grade transistor is qualified to MIL-PRF-19500/394, making it suitable for aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 10A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/394 |
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