JAN2N918
TRANS NPN 15V 0.05A TO72Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JAN2N918 is a bipolar junction transistor (BJT) featuring an NPN configuration. This component is rated for a collector-emitter breakdown voltage of 15V and a maximum collector current of 50mA. It offers a minimum DC current gain (hFE) of 20 at 3mA collector current and 1V collector-emitter voltage. The transistor has a maximum collector cutoff current (ICBO) of 1µA and a Vce saturation of 400mV at 1mA base current and 10mA collector current. With a maximum power dissipation of 200mW, the JAN2N918 is housed in a TO-72-3 metal can package suitable for through-hole mounting. This device adheres to MIL-PRF-19500/301 specifications, indicating its suitability for military applications and operating within a temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-72-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-72 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 200 mW |
| Qualification | MIL-PRF-19500/301 |