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JAN2N708

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JAN2N708

TRANS NPN 15V TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N708 is a high-reliability NPN bipolar junction transistor (BJT) qualified to MIL-PRF-19500/312. This TO-18 (TO-206AA) packaged device offers a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 360mW. It features a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage. The collector cutoff current (ICBO) is a maximum of 25nA. Designed for demanding applications operating across a wide temperature range of -65°C to 200°C, this component is suitable for use in military and aerospace systems. Its through-hole mounting facilitates integration into traditional circuit designs.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 1mA, 10mA
Current - Collector Cutoff (Max)25nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max360 mW
QualificationMIL-PRF-19500/312

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