JAN2N6650
TRANS PNP DARL 80V 10A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6650 is a PNP Darlington bipolar junction transistor. This high-reliability component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 10A, with a maximum power dissipation of 5W. The transistor exhibits a minimum DC current gain (hFE) of 1000 at 5A and 3V. Its saturation voltage (Vce Sat) is a maximum of 3V for a base current of 100mA at 10A collector current. The JAN2N6650 is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. Qualified to MIL-PRF-19500/527, this device is designed for demanding applications in aerospace and defense sectors. It operates across a temperature range of -65°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 5 W |
| Qualification | MIL-PRF-19500/527 |
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