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JAN2N6650

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JAN2N6650

TRANS PNP DARL 80V 10A TO204AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6650 is a PNP Darlington bipolar junction transistor. This high-reliability component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 10A, with a maximum power dissipation of 5W. The transistor exhibits a minimum DC current gain (hFE) of 1000 at 5A and 3V. Its saturation voltage (Vce Sat) is a maximum of 3V for a base current of 100mA at 10A collector current. The JAN2N6650 is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. Qualified to MIL-PRF-19500/527, this device is designed for demanding applications in aerospace and defense sectors. It operates across a temperature range of -65°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max5 W
QualificationMIL-PRF-19500/527

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