JAN2N6649
TRANS PNP DARL 60V 10A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6649 is a PNP Darlington bipolar transistor designed for demanding applications requiring high current gain and power handling. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 10A. Its robust construction, specified with a Military grade qualification under MIL-PRF-19500/527, ensures reliable operation across an extended temperature range of -65°C to 175°C (TJ). The device exhibits a minimum DC current gain (hFE) of 1000 at 5A and 3V, with a saturation voltage (Vce Sat) of 3V at 100mA and 10A. Packaged in a TO-204AA (TO-3) through-hole configuration, this transistor is suitable for power switching and amplification circuits in aerospace, defense, and industrial systems. The maximum power dissipation is rated at 5W.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
| Qualification | MIL-PRF-19500/527 |
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