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JAN2N6384

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JAN2N6384

TRANS NPN DARL 60V 10A TO204AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6384 is a military-grade NPN Darlington bipolar junction transistor. This component features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 10A, with a maximum power dissipation of 6W. The device is housed in a TO-204AA (TO-3) through-hole package, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C. It offers a minimum DC current gain (hFE) of 1000 at 5A and 3V. Saturation voltage (Vce Sat) is specified at a maximum of 3V with 100mA base current and 10A collector current. This transistor meets MIL-PRF-19500/523 qualification standards. Applications include power switching and amplification in military and industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max6 W
QualificationMIL-PRF-19500/523

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