JAN2N6383
TRANS NPN DARL 40V 10A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6383 is an NPN Darlington bipolar junction transistor (BJT) designed for high-power switching applications. This device features a 40V collector-emitter breakdown voltage and a continuous collector current capability of up to 10A. The JAN2N6383 boasts a high DC current gain (hFE) of 1000 minimum at 5A and 3V, ensuring efficient amplification. With a maximum power dissipation of 6W and an operating temperature range of -55°C to 175°C, it is qualified to MIL-PRF-19500/523, indicating its suitability for demanding military and industrial environments. The transistor is housed in a TO-204AA (TO-3) through-hole package for robust thermal management and mounting. This component is integral to power supply regulation, motor control, and general amplification circuits within aerospace and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/523 |