JAN2N6341
TRANS NPN 150V 25A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6341 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/509, features a maximum collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 25 A. With a power dissipation of 200 W and a low saturation voltage of 1.8 V at 2.5 A collector current, it is suitable for power switching and amplification circuits. The JAN2N6341 is housed in a TO-3 (TO-204AA) package, facilitating through-hole mounting. It exhibits a minimum DC current gain (hFE) of 30 at 10 A and 2 V. Operating across an extended temperature range of -65°C to 175°C, this device finds application in power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2.5A, 25A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 200 W |
| Qualification | MIL-PRF-19500/509 |
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