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JAN2N6341

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JAN2N6341

TRANS NPN 150V 25A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6341 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/509, features a maximum collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 25 A. With a power dissipation of 200 W and a low saturation voltage of 1.8 V at 2.5 A collector current, it is suitable for power switching and amplification circuits. The JAN2N6341 is housed in a TO-3 (TO-204AA) package, facilitating through-hole mounting. It exhibits a minimum DC current gain (hFE) of 30 at 10 A and 2 V. Operating across an extended temperature range of -65°C to 175°C, this device finds application in power supplies, motor control, and industrial automation systems.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10A, 2V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max200 W
QualificationMIL-PRF-19500/509

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