JAN2N6338
TRANS NPN 100V 25A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6338 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 25A, with a maximum power dissipation of 200W. The JAN2N6338 features a high DC current gain (hFE) of 30 at 10A and 2V, and a saturation voltage (Vce Sat) of 1.8V at 2.5A and 25A. It is qualified to MIL-PRF-19500/509, indicating its suitability for military-grade requirements. The transistor is housed in a TO-204AA (TO-3) package, enabling through-hole mounting for robust thermal management. Operating across a wide temperature range of -65°C to 200°C (TJ), this component finds application in power supply regulation, high-current switching, and audio amplification systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2.5A, 25A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 200 W |
| Qualification | MIL-PRF-19500/509 |
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