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JAN2N6338

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JAN2N6338

TRANS NPN 100V 25A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6338 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 25A, with a maximum power dissipation of 200W. The JAN2N6338 features a high DC current gain (hFE) of 30 at 10A and 2V, and a saturation voltage (Vce Sat) of 1.8V at 2.5A and 25A. It is qualified to MIL-PRF-19500/509, indicating its suitability for military-grade requirements. The transistor is housed in a TO-204AA (TO-3) package, enabling through-hole mounting for robust thermal management. Operating across a wide temperature range of -65°C to 200°C (TJ), this component finds application in power supply regulation, high-current switching, and audio amplification systems.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10A, 2V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max200 W
QualificationMIL-PRF-19500/509

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