JAN2N6306
TRANS NPN 250V 8A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N6306 is a high-reliability NPN bipolar junction transistor (BJT) qualified to MIL-PRF-19500/498. This through-hole component is housed in a TO-204AA (TO-3) package, facilitating robust thermal management with a maximum power dissipation of 125 W. It features a collector-emitter breakdown voltage (Vce) of 250 V and a continuous collector current (Ic) capability of 8 A. Minimum DC current gain (hFE) is rated at 15 at 3 A collector current and 5 V collector-emitter voltage. The transistor exhibits a saturation voltage (Vce (sat)) of 5 V at 2 A base current and 8 A collector current. Its operating temperature range is specified from -65°C to 200°C (TJ). This component is suitable for demanding applications in defense, aerospace, and industrial power control systems requiring robust performance and extended operational lifecycles.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 2A, 8A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 125 W |
| Qualification | MIL-PRF-19500/498 |
Request a Quote
Clients Also Buy
JANTXV2N6649
TRANS PNP DARL 60V 10A TO204AA
JANTX2N3418
TRANS NPN 60V 3A TO5
JAN2N2605
TRANS PNP 60V 0.03A TO46-3
