JAN2N6301P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6301P is an NPN Darlington bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a high collector current capability of 8 A and a maximum power dissipation of 75 W. Key electrical characteristics include a collector-emitter breakdown voltage of 80 V and a low saturation voltage of 3 V at 80 mA collector current and 8 A collector current. The device exhibits a minimum DC current gain (hFE) of 750 at 4 A and 3 V. Operating within a temperature range of -55°C to 200°C, this transistor is suitable for use in industrial and defense sectors requiring robust power switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
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