JAN2N6301
TRANS NPN DARL 80V 8A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N6301 is an NPN Darlington bipolar transistor designed for high-power applications. This military-grade component, qualified under MIL-PRF-19500/539, features a robust TO-66 (TO-213AA) package for through-hole mounting. It offers a maximum collector current (Ic) of 8 A and a collector-emitter breakdown voltage (Vce(max)) of 80 V, with a maximum power dissipation of 75 W. The device exhibits a minimum DC current gain (hFE) of 750 at 4 A and 3 V, and a Vce saturation of 3 V at 80 mA and 8 A. Operating across a temperature range of -55°C to 200°C, the JAN2N6301 is suitable for demanding environments in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
| Qualification | MIL-PRF-19500/539 |
Request a Quote
Clients Also Buy
JAN2N5339U3
TRANS NPN 100V 5A U-3
JAN2N3735
TRANS NPN 40V 1.5A TO39
2N5729
POWER BJT
