JAN2N6300
TRANS NPN DARL 60V 8A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6300 is an NPN Darlington bipolar transistor designed for demanding applications requiring high current gain and power handling. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 8A, with a power dissipation capability of 75W. The JAN2N6300 offers a minimum DC current gain (hFE) of 750 at 4A and 3V, and a saturation voltage (Vce(sat)) of 3V at 80mA and 8A. Its TO-66 (TO-213AA) through-hole package and a wide operating temperature range of -55°C to 200°C (TJ) make it suitable for military-grade applications and harsh environments. Qualification under MIL-PRF-19500/539 ensures adherence to stringent military standards.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 75 W |
| Qualification | MIL-PRF-19500/539 |
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