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JAN2N6299P

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JAN2N6299P

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology JAN2N6299P is a PNP Darlington power bipolar transistor. This component features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 8 A, with a maximum power dissipation of 64 W. The saturation voltage (Vce Sat) is specified at 2 V maximum for an 80 mA base current and 8 A collector current. DC current gain (hFE) is a minimum of 750 at 4 A collector current and 3 V emitter-collector voltage. The transistor is housed in a TO-66 (TO-213AA) through-hole package, suitable for applications operating within a temperature range of -65°C to 175°C. This device is commonly found in industrial control, power supply, and automotive applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max64 W

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