JAN2N6299P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6299P is a PNP Darlington power bipolar transistor. This component features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 8 A, with a maximum power dissipation of 64 W. The saturation voltage (Vce Sat) is specified at 2 V maximum for an 80 mA base current and 8 A collector current. DC current gain (hFE) is a minimum of 750 at 4 A collector current and 3 V emitter-collector voltage. The transistor is housed in a TO-66 (TO-213AA) through-hole package, suitable for applications operating within a temperature range of -65°C to 175°C. This device is commonly found in industrial control, power supply, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |
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