JAN2N6299
TRANS PNP DARL 80V 8A TO213AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6299 is a high-reliability PNP Darlington bipolar junction transistor. This component is designed for demanding applications, offering a robust 80V collector-emitter breakdown voltage and a continuous collector current capability of 8A. With a maximum power dissipation of 64W, it is suitable for power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 750 at 4A and 3V, with a Vce saturation of 2V at 16mA and 4A. Packaged in a TO-213AA (TO-66-2) through-hole mount configuration, the JAN2N6299 operates within an extended temperature range of -65°C to 175°C. It meets MIL-PRF-19500/540 qualification, making it ideal for military and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Grade | Military |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |
| Qualification | MIL-PRF-19500/540 |
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