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JAN2N6299

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JAN2N6299

TRANS PNP DARL 80V 8A TO213AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6299 is a high-reliability PNP Darlington bipolar junction transistor. This component is designed for demanding applications, offering a robust 80V collector-emitter breakdown voltage and a continuous collector current capability of 8A. With a maximum power dissipation of 64W, it is suitable for power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 750 at 4A and 3V, with a Vce saturation of 2V at 16mA and 4A. Packaged in a TO-213AA (TO-66-2) through-hole mount configuration, the JAN2N6299 operates within an extended temperature range of -65°C to 175°C. It meets MIL-PRF-19500/540 qualification, making it ideal for military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 16mA, 4A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
GradeMilitary
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max64 W
QualificationMIL-PRF-19500/540

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