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JAN2N6298

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JAN2N6298

TRANS PNP DARL 60V 8A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6298 is a PNP Darlington bipolar junction transistor (BJT) designed for high-current applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of 8A, with a maximum power dissipation of 64W. The device exhibits a minimum DC current gain (hFE) of 750 at 4A and 3V. It is specified with a Vce(sat) of 2V at 80mA collector current. The JAN2N6298 operates across a wide temperature range of -65°C to 175°C and is housed in a TO-66 (TO-213AA) package suitable for through-hole mounting. This part meets MIL-PRF-19500/540 qualification, indicating its suitability for demanding military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max64 W
QualificationMIL-PRF-19500/540

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