JAN2N6298
TRANS PNP DARL 60V 8A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6298 is a PNP Darlington bipolar junction transistor (BJT) designed for high-current applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of 8A, with a maximum power dissipation of 64W. The device exhibits a minimum DC current gain (hFE) of 750 at 4A and 3V. It is specified with a Vce(sat) of 2V at 80mA collector current. The JAN2N6298 operates across a wide temperature range of -65°C to 175°C and is housed in a TO-66 (TO-213AA) package suitable for through-hole mounting. This part meets MIL-PRF-19500/540 qualification, indicating its suitability for demanding military and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 64 W |
| Qualification | MIL-PRF-19500/540 |
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