JAN2N6286
TRANS PNP DARL 80V 20A TO204Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6286 is a high-power PNP Darlington bipolar junction transistor (BJT) designed for demanding applications. This component features a robust TO-204AA (TO-3) package, suitable for through-hole mounting and efficient thermal management. With a maximum collector current (Ic) of 20 A and a collector-emitter breakdown voltage (Vce) of 80 V, it delivers substantial power handling capabilities up to 175 W. The device exhibits a minimum DC current gain (hFE) of 1500 at 1 A and 3 V, characteristic of its Darlington configuration. The saturation voltage (Vce Sat) is specified at a maximum of 3 V for 200 mA base current and 20 A collector current. Operating across a wide temperature range of -65°C to 200°C (TJ), this military-grade transistor, qualified under MIL-PRF-19500/505, is utilized in sectors requiring high reliability and performance, such as aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 1A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 175 W |
| Qualification | MIL-PRF-19500/505 |