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JAN2N6286

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JAN2N6286

TRANS PNP DARL 80V 20A TO204

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6286 is a high-power PNP Darlington bipolar junction transistor (BJT) designed for demanding applications. This component features a robust TO-204AA (TO-3) package, suitable for through-hole mounting and efficient thermal management. With a maximum collector current (Ic) of 20 A and a collector-emitter breakdown voltage (Vce) of 80 V, it delivers substantial power handling capabilities up to 175 W. The device exhibits a minimum DC current gain (hFE) of 1500 at 1 A and 3 V, characteristic of its Darlington configuration. The saturation voltage (Vce Sat) is specified at a maximum of 3 V for 200 mA base current and 20 A collector current. Operating across a wide temperature range of -65°C to 200°C (TJ), this military-grade transistor, qualified under MIL-PRF-19500/505, is utilized in sectors requiring high reliability and performance, such as aerospace and defense systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 200mA, 20A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1500 @ 1A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max175 W
QualificationMIL-PRF-19500/505

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