JAN2N6284
TRANS NPN DARL 100V 20A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6284. This is a JAN qualified NPN Darlington bipolar transistor designed for high power applications. It features a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 20A. The device boasts a high DC current gain (hFE) of at least 1250 at 10A and 3V, with a maximum saturation voltage (Vce Sat) of 3V at 200mA collector current. Power dissipation is rated at 175W. The JAN2N6284 is packaged in a TO-3 (TO-204AA) metal can for through-hole mounting, ensuring robust thermal performance. This component meets MIL-PRF-19500/504 specifications, making it suitable for demanding military and industrial environments, including power switching and control circuits. Operating temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1250 @ 10A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 175 W |
| Qualification | MIL-PRF-19500/504 |