JAN2N6283
TRANS NPN DARL 80V 20A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6283 is an NPN Darlington bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, packaged in a TO-3 (TO-204AA) case, offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 20A. With a significant DC current gain (hFE) of 1250 minimum at 10A and 3V, and a low saturation voltage of 3V maximum at 200mA and 20A, it facilitates efficient power switching. The device dissipates a maximum power of 175W and operates across an extended temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/504, this transistor is suitable for military and high-reliability industrial power control, power supply, and motor drive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1250 @ 10A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 175 W |
| Qualification | MIL-PRF-19500/504 |