JAN2N6277
TRANS NPN 150V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6277 is a JAN-qualified NPN bipolar junction transistor (BJT) designed for high-power switching and amplification applications. This through-hole component, housed in a TO-3 (TO-204AA) package, offers a continuous collector current capability of 50A and a collector-emitter breakdown voltage of 150V. With a maximum power dissipation of 250W and a minimum DC current gain (hFE) of 30 at 20A and 4V, it provides robust performance. The saturation voltage (Vce(sat)) is specified at 3V maximum for 10A base current and 50A collector current. Operating across a temperature range of -65°C to 200°C, this transistor meets MIL-PRF-19500/514 specifications, making it suitable for demanding defense and aerospace systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 250 W |
| Qualification | MIL-PRF-19500/514 |