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JAN2N6274

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JAN2N6274

TRANS NPN 100V 50A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6274, a high-power NPN bipolar junction transistor, is specified for demanding applications. This hermetically sealed TO-3 packaged device offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a maximum power dissipation of 250W. Key parameters include a minimum DC current gain (hFE) of 30 at 20A and 4V, and a saturation voltage (Vce Sat) not exceeding 3V at 10A collector current and 10A base current. The device features a low collector cutoff current of 50µA (Max) and operates across a wide temperature range from -65°C to 200°C. Qualified to MIL-PRF-19500/514, this transistor is suitable for military and industrial power switching and amplification circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 10A, 50A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20A, 4V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max250 W
QualificationMIL-PRF-19500/514

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