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JAN2N6251

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JAN2N6251

TRANS NPN 350V 10A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6251 is a high-voltage NPN bipolar junction transistor designed for demanding applications. This MIL-PRF-19500/510 qualified component features a 350V collector-emitter breakdown voltage and a continuous collector current capability of 10A. The device exhibits a minimum DC current gain (hFE) of 6 at 10A and 3V, with a Vce(sat) of 1.5V at 1.67A and 10A. With a maximum power dissipation of 5.5W and an operating temperature range of -65°C to 200°C, the JAN2N6251 is suitable for use in military and industrial power switching and amplification circuits. It is supplied in a TO-3 (TO-204AA) through-hole package, available in bulk.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.67A, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 10A, 3V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max5.5 W
QualificationMIL-PRF-19500/510

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