JAN2N6251
TRANS NPN 350V 10A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6251 is a high-voltage NPN bipolar junction transistor designed for demanding applications. This MIL-PRF-19500/510 qualified component features a 350V collector-emitter breakdown voltage and a continuous collector current capability of 10A. The device exhibits a minimum DC current gain (hFE) of 6 at 10A and 3V, with a Vce(sat) of 1.5V at 1.67A and 10A. With a maximum power dissipation of 5.5W and an operating temperature range of -65°C to 200°C, the JAN2N6251 is suitable for use in military and industrial power switching and amplification circuits. It is supplied in a TO-3 (TO-204AA) through-hole package, available in bulk.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.67A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 10A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 5.5 W |
| Qualification | MIL-PRF-19500/510 |