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JAN2N6193

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JAN2N6193

TRANS PNP 100V 5A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N6193 is a PNP bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a maximum collector-emitter voltage (Vceo) of 100V and a continuous collector current (Ic) of up to 5A. It exhibits a minimum DC current gain (hFE) of 60 at 2A collector current and 2V collector-emitter voltage. The device is rated for a maximum power dissipation of 1W and operates across an extended temperature range of -65°C to 200°C. With a collector cutoff current (Icbo) of 100µA and a Vce(sat) of 1.2V at 500mA base current and 5A collector current, it meets MIL-PRF-19500/561 qualification standards. This transistor is suitable for use in aerospace, defense, and industrial power switching applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 500mA, 5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 2V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W
QualificationMIL-PRF-19500/561

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