JAN2N6193
TRANS PNP 100V 5A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6193 is a PNP bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a maximum collector-emitter voltage (Vceo) of 100V and a continuous collector current (Ic) of up to 5A. It exhibits a minimum DC current gain (hFE) of 60 at 2A collector current and 2V collector-emitter voltage. The device is rated for a maximum power dissipation of 1W and operates across an extended temperature range of -65°C to 200°C. With a collector cutoff current (Icbo) of 100µA and a Vce(sat) of 1.2V at 500mA base current and 5A collector current, it meets MIL-PRF-19500/561 qualification standards. This transistor is suitable for use in aerospace, defense, and industrial power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/561 |