JAN2N6059
TRANS NPN DARL 100V 12A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6059 is a high-reliability NPN Darlington bipolar junction transistor. This component is rated for a 100V collector-emitter breakdown voltage and can handle a continuous collector current of up to 12A. It features a minimum DC current gain (hFE) of 1000 at 6A and 3V. The saturation voltage (Vce Sat) is a maximum of 3V at 120mA and 12A. With a maximum power dissipation of 150W, this JAN-qualified device is designed for demanding applications. It is packaged in a TO-204AA (TO-3) metal can for through-hole mounting and is specified for operation across a wide temperature range of -55°C to 175°C. This transistor is suitable for use in military and high-reliability industrial power switching and amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
| Qualification | MIL-PRF-19500/502 |