JAN2N6058
TRANS NPN DARL 80V 12A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6058 is a military-grade NPN Darlington bipolar junction transistor. This through-hole component, housed in a TO-3 (TO-204AA) package, offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 12A. With a power dissipation capability of 150W and a minimum DC current gain (hFE) of 1000 at 6A and 3V, it is suitable for high-power switching and amplification applications. The device features a saturation voltage (Vce Sat) of 3V at 120mA collector current and 12A, with a collector cutoff current (Ic) of 1mA. Operating temperature ranges from -55°C to 175°C. This component is qualified to MIL-PRF-19500/502, indicating its suitability for demanding defense and aerospace electronic systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 150 W |
| Qualification | MIL-PRF-19500/502 |