JAN2N6051
TRANS PNP DARL 80V 12A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N6051 is a high-reliability PNP Darlington bipolar transistor designed for demanding applications. This component features a 80 V collector-emitter breakdown voltage and a continuous collector current capability of 12 A, with a maximum power dissipation of 150 W. The JAN2N6051 exhibits a minimum DC current gain (hFE) of 1000 at 6 A and 3 V, and a saturation voltage (Vce Sat) of 3 V at 120 mA and 12 A. Packaged in a TO-3 (TO-204AA) through-hole configuration, this device is rated for operation across a wide temperature range of -55°C to 175°C (TJ). Its MIL-PRF-19500/501 qualification signifies its suitability for military and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 150 W |
| Qualification | MIL-PRF-19500/501 |
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